4707 dey road liverpool, n.y. 13088 m.s.kennedy corp. (315) 701-6751 4852 features: full three phase bridge configuration with scr/igbt brake 1200v rated voltage 150a continuous output current internal zener clamps on gates proprietary encapsulation provides near hermetic performance mil-prf-38534 screening available (modified) light weight domed alsic baseplate robust mechanical design for hi-rel applications ultra-low inductance internal layout withstands 96 hours hast and thermal cycling (-55c to +125c) contact msk for mil-prf-38534 qualification status mil-prf-38534 certified 1200v/150a three phase bridge pem with brake equivalent schematic description: the msk 4852 is one of a family of plastic encapsulated modules (pem) developed specifically for use in military, aerospace and other severe environment applications. the three phase bridge configuration along with the scr/igbt brake circuit and 1200 volt/150 amp rating make it ideal for use in high current motor drive and inverter applications. the aluminum silicon carbide (alsic) baseplate offers superior flatness and light weight; far better than the copper or copper alloys found in most high power plastic modules. the high thermal conductivity materials used to construct the msk 4852 allow high power outputs at elevated baseplate temperatures. our proprietary coating, sees? - severe environment encapsulation system - protects the internal circuitry of msk pem's from moisture and contamination, allowing them to pass the rugged environmental screening requirements of military and aerospace applications. msk pem's are also avail- able with industry standard silicone gel coatings for a lower cost option. typical applications rev. d 10/08 1 motor drives inverters
2 case isolation voltage storage temperature range junction temperature case operating temperature range msk 4852h/e msk 4852 2500v -55c to +125c 150c -55c to +125c -40c to +85c collector to emitter voltage gate to emitter voltage current (continuous) current pulsed (1ms) current (continuous) current pulsed (1ms) v case t st t j t c electrical specifications absolute maximum rating 1200v 20v 150a 300a 100a 150a guaranteed by design but not tested. typical parameters are representative of actual device performance but are for reference o nly. industrial grade and "e" suffix devices shall be tested to subgroup 1 unless otherwise specified. military grade devices ("h" suffix) shall be 100% tested to subgroups 1, 2 and sample tested to subgroup 3. subgroups 4, 5 and 6 testing available upon request. subgroup 1, 4 t a = +25c 2, 5 t a = +125c 3, 6 t a = -55c all specifications apply to both the upper and lower sections of the half bridge. measurements are made by forcing current through the power lugs and measuring the actual die drop at the small signal terminals . measurements are provided for determining thermal dissipation on the igbt/diode. measurements includes die, substrate, wire bond and power lug. v ge =15v unless otherwise specified. continuous operation at or above absolute maximum ratings may adversly effect the device performance and/or life cycle. v ce v ge i out i outp i scr/reg i scr/reg 1 2 3 4 5 6 7 8 9 10 10 rev. d 10/08 notes:
application notes power dissipation and maximum allowable temperature rise involve many variables working together. collector current, pwm duty cycle and switching frequency all factor into power dissipation. dc losses or "on-time" losses are simply v ce (sat) x collector current x pwm duty cycle. for the msk 4852, v ce (sat)=1.9v typically, and at 150 amps and a pwm duty cycle of 30%, dc losses equal 85.5 watts. switching losses, in milli-joules, vary proportionally with switching frequency. the msk 4852 typical switching losses at v ce =600v and i ce =150a are about 48mj, which is simply the sum of the turn-on switching loss and the turn-off switching loss. multiplying the switching frequency times the switching losses will result in a power dissipation number for switching. the msk 4852, at 10khz, will exhibit switching power dissipation of 480 watts. the total losses are the sum of dc losses plus switching losses, or in this case, 565.5 watts total. 565.5 watts x 0.20c/w thermal resistance equals 113 degrees of temperature rise between the case and the junction. subtracting 113c from the maximum junction temperature of 150c equals 37c maximum case temperature for this example. v ce (sat) x ic x pwm duty cycle = 1.9v x 150 amps x 30% = 85.5 watts dc losses turn-on switching loss + turn-off switching loss = total switching losses = 31 + 17 = 48mj total switching loss x pwm frequency = total switching power dissipation = 48mj x 10khz = 480watts total power dissipation = dc losses + switching losses = 85.5 + 480 = 565.5 watts junction temperature rise above case = total power dissipation x thermal resistance 565.5 watts x 0.2c/w = 113c temperature rise above case maximum junction temperature - junction temperature rise = maximum baseplate temperature 150c - 113c = 37c thermal calculations 3 rev. d 10/08
typical performance curves 4 tbd rev. d 10/08
screening chart 5 rev. d 10/08
the information contained herein is believed to be accurate at the time of printing. msk reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products. please visit our website for the most recent revision of this datasheet. contact msk for mil-prf-38534 qualification status. mechanical specifications 6 ordering information m.s. kennedy corp. 4707 dey road liverpool, new york 13088 phone (315) 701-6751 fax (315) 701-6752 www.mskennedy.com MSK4852 h screening blank=industrial; e=extended reliability; h=mil-prf-38534 class h (modified) general part number the above example is a military screened module. weight = 442 grams max. rev. d 10/08
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